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MSATS14S40L Scheda tecnica(PDF) 2 Page - Microsemi Corporation |
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MSATS14S40L Scheda tecnica(HTML) 2 Page - Microsemi Corporation |
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2 / 2 page ![]() DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT Breakdown Voltage VBR IBR = 1mA 25 °C 40 43 n/a V Rated Standoff Voltage VR 36 V Reverse Leakage IR VR = 36V 0.3 5 µA Peak Pulse Current IPP tr=10us, tp=1ms (see fig.1) 250 A Clamping Voltage VC1 IPP = 250A tr=10us, tp=1ms 55 58 Clamping Voltage VC2 IPP = 200A tr=6us, tp=70us 48 51 Temp. Coef.of VBR TBD %/C Electrical Parameters @25 °°C MSATS14S40L MSATS14S40LR 0.0 20.0 40.0 60.0 80.0 100.0 0 1000 2000 3000 t - TIME - (us) Pulse Current (% of IPP) 0 25 50 75 100 0 50 100 150 200 Temperature (C) Fig.1 Pulse Waveform Fig.2 Derating Curve Datasheet# MSC1038A |
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