4

SP5658

ELECTRICAL CHARACTERISTICS

T amb = –20

°C to + 80°C, V

by either production test or design. They apply within the specified ambient temperature and supply voltage ranges unless

otherwise stated.

Characteristics

Pin

Value

Units

Conditions

(SP5658S)

Bus Timing

4,5,6

Data set up, t

SU

300

ns

See Fig. 3

Data hold, t

HD

600

ns

See Fig. 3

Enable set up, t

ES

300

ns

See Fig. 3

Enable hold, t

EH

600

ns

See Fig. 3

Clock to enable, t

CE

300

ns

See Fig. 3

Charge pump output current

1

See Table 3, V

Charge pump output leakage

1

± 3

± 10

nA

V

Charge pump drive output

16

1

mA

V

current

Oscillator temperature stability

2

2

ppm/

°C

Oscillator supply voltage

2

2

ppm/V

stability

External reference input

2

2

20

MHz

AC coupled sinewave

frequency

External reference input

2

200

500

mV

PP

AC coupled sinewave

amplitude

Crystal frequency

2

4

12

MHz

Crystal oscillator drive level

2

45

mV

PP

Recommended crystal series

100

200

Ω

Applies to 4MHz crystal only.

resistance

‘‘Parallel resonant” crystal. Figure

quoted is under all conditions

including start up.

Crystal oscillator negative

2

400

Ω

Includes temperature and process

resistance

tolerances.

Comparison frequency

2

MHz

Phase noise at phase detector

–142

dBC/

6kHz loop BW, phase comparator

Hz

freq 250kHz. Figure measured @

1kHz offset, DSB (within loop band

width).

RF division ratio

240

131071

Prescaler disabled, DE=0

480

262142

Prescaler enabled, DE=1

Reference division ratio

See Table 1

Output ports P0–P3 #

7,8,9,10

Sink current

10

mA

V

Leakage current

10

µAV

Lock output

11

Sink current

1

mA

V

Leakage current

10

µA

‘in lock’

# Ports P2 and P3 are not available on the SP5658F.

Min

Typ

Max