MPF930 datasheet(2/4 Pages) ONSEMI

2 / 4 page

MPF930

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS(2) (Continued)

Static Drain−Source On Resistance

(VGS = 10 Vdc, ID = 1.0 Adc)

MPF930

MPF960

MPF990

rDS(on)

—

0.9

1.2

1.4

1.7

2.0

On−State Drain Current

(VDS = 25 Vdc, VGS = 10 Vdc)

ID(on)

1.0

2.0

—

Amps

SMALL−SIGNAL CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

—

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Crss

—

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Coss

—

Forward Transconductance

(VDS = 25 Vdc, ID = 0.5 Adc)

gfs

200

380

—

mmhos

SWITCHING CHARACTERISTICS

Turn−On Time

ton

—

7.0

Turn−Off Time

toff

—

7.0

2. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.

Figure 1. Switching Test Circuit

Figure 2. Switching Waveforms

RESISTIVE SWITCHING

OUTPUT

INVERTED

50%

10%

50%

toff

ton

Vin

Vout

PULSE

WIDTH

90%

10%

INPUT

90%

10 V

20 dB

50 Ω ATTENUATOR

PULSE GENERATOR

+25 V

Vin

40 pF

1.0 M

Vout

TO SAMPLING SCOPE

50 Ω INPUT

MPF930 Scheda tecnica(PDF) 2 Page - ON Semiconductor

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