MBR440MFS datasheet(2/5 Pages) ONSEMI

2 / 5 page

MBR440MFS, NRVB440MFS

http://onsemi.com

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

Average Rectified Forward Current

(Rated VR, TC = 165°C)

IF(AV)

4.0

Peak Repetitive Forward Current,

(Rated VR, Square Wave, 20 kHz, TC = 165°C)

IFRM

8.0

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

IFSM

Storage Temperature Range

Tstg

−65 to +175

°C

Operating Junction Temperature

−55 to +175

°C

Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)

EAS

ESD Rating (Human Body Model)

ESD Rating (Machine Model)

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Typ

Max

Unit

Thermal Resistance, Junction−to−Case, Steady State

(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)

RθJC

−

2.4

°C/W

ELECTRICAL CHARACTERISTICS

Instantaneous Forward Voltage (Note 1)

(iF = 4 Amps, TJ = 125°C)

(iF = 4 Amps, TJ = 25°C)

0.58

0.59

0.63

0.65

Instantaneous Reverse Current (Note 1)

(Rated dc Voltage, TJ = 125°C)

(Rated dc Voltage, TJ = 25°C)

0.070

0.8

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

MBR440MFS Scheda tecnica(PDF) 2 Page - ON Semiconductor

MBR440MFS Scheda tecnica(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5

Scheda tecnica Scarica

Link URL