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MBRS3100P Scheda tecnica(PDF) 2 Page - ON Semiconductor

Il numero della parte MBRS3100P
Spiegazioni elettronici  Surface Mount Schottky Power Rectifier
PDF  4 Pages
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MBRS3100P Scheda tecnica(HTML) 2 Page - ON Semiconductor

  MBRS3100P Datasheet HTML 1Page - ON Semiconductor MBRS3100P Datasheet HTML 2Page - ON Semiconductor MBRS3100P Datasheet HTML 3Page - ON Semiconductor MBRS3100P Datasheet HTML 4Page - ON Semiconductor  
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MBRS3100P
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2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(At Rated VR, TL = 100°C)
IF(AV)
3.0
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
130
A
Operating Junction Temperature Range (Note 1)
TJ
− 65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead
RqJL
11
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 3.0 A, TJ = 25°C)
(iF = 6.0 A, TJ = 25°C)
(iF = 3.0 A, TJ = 125°C)
(iF = 6.0 A, TJ = 125°C)
VF
0.79
0.90
0.62
0.70
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR
0.2
5.0
mA
2. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2.0%.



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