THS4281DBVT datasheet(31/43 Pages) TI1

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Layer 3 − GND

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THS4281

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SLOS432B – APRIL 2004 – REVISED OCTOBER 2015

Layout Examples (continued)

Figure 79. THS4281EVM Board Layout

Figure 78. THS4281EVM Board Layout

10.3 Thermal Considerations

The THS4281 does not incorporate automatic thermal shutoff protection, so the designer must take care to

ensure that the design does not violate the absolute maximum junction temperature of the device. Failure may

result if the absolute maximum junction temperature of +150°C is exceeded. For long-term dependability, the

junction temperature should not exceed +125°C.

The thermal characteristics of the device are dictated by the package and the PCB. Maximum power dissipation

for a given package can be calculated using the following formula.

PDmax = (Tmax - TA) / θJA

where

•

PDmax is the maximum power dissipation in the amplifier (W).

•

Tmax is the absolute maximum junciton temperature (ºC).

•

TA is the ambient temperature (ºC).

•

θJA = θJC + θCA

•

JC is the thermal coefficient from the silicon junctions to the case (ºC/W).

•

JA is the thermal coefficient from the case to ambient air (ºC/W).

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