EM3596-RTR datasheet(20/59 Pages) SILABS

20 / 59 page

EM359x

Rev 1.0

Table 3.6 lists the nRESET pin specifications for the EM359x. The digital I/O power (named VDD_PADS) comes

from three dedicated pins (Pins 27, 35, and 44). The voltage applied to these pins sets the I/O voltage.

3.6. Non-RF System Electrical Characteristics

Table 3.7 lists the non-RF system level characteristics for the EM359x.

Table 3.6. nReset Pin Specifications

Parameter

Test Condition

Min

Typ

Max

Unit

Low Schmitt switching threshold

VSWIL

Schmitt input threshold going from

high to low

0.42 x

VDD_PADS

—

0.50 x

VDD_PADS

High Schmitt switching threshold

VSWIH

Schmitt input threshold going from

low to high

0.62 x

VDD_PADS

—

0.80 x

VDD_PADS

Input current for logic 1

IIH

—

+0.5

μA

Input pull-up resistor value

RIPU

Pull-up value while the chip is not

reset



Input pull-up resistor value

RIPURESET

Pull-up value while the chip is

reset

14.5



Table 3.7. Non-RF System Electrical Characteristics

Parameter

Test Condition

Min

Typ

Max

Unit

System wake time from deep

sleep

From wakeup event to first ARM® Cor-

texTM-M3 instruction running from 6 MHz

internal RC clock

Includes supply ramp time and oscillator

startup time

—

110

—

µs

Shutdown time going into deep

sleep

From last ARM® CortexTM-M3 instruction

to deep sleep mode

—

µs

EM3596-RTR Scheda tecnica(PDF) 20 Page - Silicon Laboratories

EM3596-RTR Scheda tecnica(HTML) 20 Page - Silicon Laboratories

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59

Scheda tecnica Scarica

Link URL