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DF2B6M4SL Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor

Il numero della parte DF2B6M4SL
Spiegazioni elettronici  This product is designed for protection against electrostatic discharge and is not intended for any other purpose, including, but not limited to, voltage regulation.
PDF  8 Pages
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

DF2B6M4SL Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor

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DF2B6M4SL
2015-09-29
2
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse stand-off voltage
VRWM
―
―
―
5.5
V
Reverse breakdown voltage
VBR
IBR = 1 mA
5.6
6.2
8
V
Reverse current
IR
VRWM = 5.5 V
―
―
0.1
A
Clamping Voltage
Vc
IPP=1A (Note1)
―
8.5
―
V
Vc
IPP=2A (Note1)
―
10
15
V
Clamping Voltage
Vc
ITLP=16A (Note2)
―
18
―
V
Vc
ITLP=30A (Note2)
―
25
―
V
Dynamic resistance
RDYN
(Note2)
―
0.5
―
Ω
Total capacitance
Ct
VR  0 V, f  1 MHz (Note3)
―
0.2
0.3
pF
Note1：Based on IEC61000-4-5 8/20μs pulse.
Note2：TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps, averaging window: t1 = 30 ns to t2 = 60 ns,
extraction of dynamic resistance using least squares fit of TLP characteristics between IPP1 = 8A and IPP2 = 16A.
Note3：Guaranteed by design.
Equivalent Circuit (Top View)
Marking
Land Pattern Dimensions for Reference Only（Unit：mm）
Pin1 Mark
1
2



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