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BSP613P Scheda tecnica(PDF) 1 Page - Infineon Technologies AG |
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BSP613P Scheda tecnica(HTML) 1 Page - Infineon Technologies AG |
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1 / 8 page ![]() 2004-06-02 Page 1 BSP613P SIPMOS® Small-Signal-Transistor Product Summary VDS -60 V RDS(on) 0.13 Ω ID -2.9 A Feature • P-Channel • Enhancement mode • Avalanche rated • dv/dt rated • Ideal for fast switching buck converter SOT-223 Gate pin1 Drain pin 2,4 Source pin 3 Type Package Ordering Code BSP613P SOT-223 Q67040-S4190 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID -2.9 -2.3 A Pulsed drain current TA=25°C ID puls -11.6 Avalanche energy, single pulse ID=2.9 A , VDD=-25V, RGS=25Ω EAS 150 mJ Avalanche energy, periodic limited by Tjmax EAR 0.18 Reverse diode dv/dt IS=2.9A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C dv/dt 6 kV/µs Gate source voltage VGS ±20 V Power dissipation TA=25°C Ptot 1.8 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56 |
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