| Motore di ricerca datesheet componenti elettronici |
|
STF43N60DM2 Scheda tecnica(PDF) 5 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STF43N60DM2 Scheda tecnica(HTML) 5 Page - STMicroelectronics |
|
5 / 13 page ![]() STF43N60DM2 Electrical characteristics DocID026789 Rev 2 5/13 Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD (1) Source-drain current - 34 A ISDM (2) Source-drain current (pulsed) - 136 A VSD (3) Forward on voltage VGS = 0 V, ISD = 34 A - 1.6 V trr Reverse recovery time ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 120 ns Qrr Reverse recovery charge - 0.6 µC IRRM Reverse recovery current - 10.4 A trr Reverse recovery time ISD = 34 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 240 ns Qrr Reverse recovery charge - 2.4 µC Reverse recovery current - 20.5 A Notes: (1) Limited by maximum junction temperature. (2) Pulse width is limited by safe operating area. (3) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. |
|
|
Link URL |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | Collegamento alla scheda tecnica | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |