STI55NF03L datasheet(5/12 Pages) STMICROELECTRONICS

Il numero della parte	STI55NF03L

Spiegazioni elettronici	N-channel 30 V, 0.01 Ω, 55 A, I²PAK STripFET™ II Power MOSFET

PDF	12 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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STI55NF03L

Electrical characteristics

Doc ID 018838 Rev 1

5/12

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD = 15 V, ID = 27.5 A

RG =4.7 Ω VGS = 10 V

(see Figure 13)

400

td(off)

Turn-off-delay time

Fall time

VDD = 15 V, ID = 27.5 A

RG =4.7 Ω, VGS = 10 V

(see Figure 13)

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

ISD

Source-drain current

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current

(pulsed)

220

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 55 A, VGS = 0

1.3

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 55 A, VDD = 30 V

di/dt = 100 A/µs,

Tj = 150 °C

(see Figure 15)

160

4.5

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