SANGDEST

MICROELECTRONICS

Technical Data

Data Sheet N1677, Rev. -

• Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113

(86) 25-87123907

•

• FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •

203DMQ SERIES

Maximum Ratings:

Characteristics

Symbol

Condition

Max.

Units

Peak Inverse Voltage

-

80

203DMQ080

V

100

203DMQ100

Average Forward Current

rectangular wave form

100

per leg

A

200

per device

Peak One Cycle Non-

Repetitive Surge Current

(per leg)

8.3 ms, half Sine pulse

2520

A

Non-Repetitive Avalanche

Energy(peg leg)

15

mJ

Repetitive Avalanche

Current(peg leg)

Current decaying linearly to zero

in 1 μsec Frequency limited by

1

A

Electrical Characteristics:

Characteristics

Symbol

Condition

Max.

Units

Forward Voltage Drop

(per leg) *

0.86

1.03

V

0.70

0.84

V

Reverse Current (per leg) *

3

mA

40

mA

Junction Capacitance

(per leg)

2650

pF

Typical Series Inductance

(per leg)

Measured lead to lead 5 mm

from package body

7.0

nH

Voltage Rate of Change

dv/dt

-

10,000

V/

μs

Insulation Voltage

-

1000

V

Thermal-Mechanical Specifications:

Characteristics

Symbol

Condition

Specification

Units

Junction Temperature

-

-55 to +175

°C

Storage Temperature

-

-55 to +175

°C

Maximum Thermal

Resistance Junction to Case

(per leg)

DC operation

0.70

°C/W

Maximum Thermal

Resistance Junction to Case

(per package)

DC operation

0.35

°C/W

Typical Thermal Resistance,

case to Heat Sink

Mounting surface, smooth

and greased

0.10

°C/W

Mounting Torque

-

Mounting

Torque

24(min)

35(max)

Kg-cm

Terminal

Torque

35(min)

46(max)

Approximate Weight

wt

-

79

g

Case Style

PRM4 Isolated