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L2G3IS Scheda tecnica(PDF) 13 Page - STMicroelectronics |
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L2G3IS Scheda tecnica(HTML) 13 Page - STMicroelectronics |
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13 / 26 page ![]() DocID024950 Rev 3 13/26 L2G3IS Mechanical and electrical characteristics 26 3.5 Absolute maximum ratings Stresses above those listed as “absolute maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device under these conditions is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. Note: Supply voltage on any pin should never exceed 4.8 V. Absolute maximum ratings Symbol Ratings Maximum value Unit AVdd Supply voltage -0.3 to 4.8 V HAVdd Supply voltage -0.3 to 4.8 V Vdd_IO Vdd IO -0.3 to Vdd V Vin Input voltage on: (CS, SDI/SDO, SCL) -0.3 to Vdd_IO +0.1 V TSTG Storage temperature range -40 to +125 °C Sg Acceleration g for 0.1 ms 10,000 g ESD Electrostatic discharge protection 2 (HBM) kV This device is sensitive to mechanical shock, improper handling can cause permanent damage to the part. This device is sensitive to electrostatic discharge (ESD), improper handling can cause permanent damage to the part. |
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