STB46N30M5 datasheet(4/17 Pages) STMICROELECTRONICS

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Electrical characteristics

STB46N30M5

4/17

DocID026126 Rev 2

Electrical characteristics

(TC = 25 °C unless otherwise specified).

Table 5. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

(VGS = 0)

ID = 1 mA

300

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 300 V

µA

VDS = 300 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

±100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 26.5 A

0.037

0.04

Table 6. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

4240

Coss

Output capacitance

205

Crss

Reverse transfer

capacitance

-9.5

Co(tr)

(1)

Co(tr) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS.

Equivalent

capacitance time

VDS = 0 to 240 V, VGS = 0

-373

Co(er)

(2)

Co(er) is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS.

Equivalent

capacitance energy

-202

Gate input resistance

f = 1 MHz, gate DC

Bias = 0,

test signal level = 20 mV,

ID = 0

-1.4

Total gate charge

VDD = 240 V, ID = 24 A,

VGS = 10 V

(see Figure 16)

-95

Qgs

Gate-source charge

Qgd

Gate-drain charge

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