STH320N4F6-2 datasheet(1/19 Pages) STMICROELECTRONICS

Il numero della parte	STH320N4F6-2

Spiegazioni elettronici	N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET™ VI DeepGATE™ Power MOSFET

PDF	19 Pages

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Produttore elettronici	STMICROELECTRONICS [STMicroelectronics]

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1 / 19 page

This is information on a product in full production.

February 2013

Doc ID 024221 Rev 1

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STH320N4F6-2,

STH320N4F6-6

N-channel 40 V, 1.1 m

Ω typ., 200 A, H²PAK-2, H²PAK-6

STripFET™ VI DeepGATE™ Power MOSFET

Datasheet — production data

Features

■ Standard threshold drive

■ 100% avalanche tested

Applications

■ Automotive switching applications

Description

These devices are N-channel Power MOSFETs

developed using the 6th generation of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFETs exhibits

the lowest RDS(on) in all packages.

Figure 1.

Internal schematic diagram

Order codes

VDS

RDS(on) max

ID

(1)

1.

Current limited by package.

STH320N4F6-2

40 V

1.3 m

Ω

200 A

STH320N4F6-6

H2PAK-6

H2PAK-2

1

2

TAB

3

TAB

7

1

D(TAB)

G(1)

S(2, 3)

SC06140_H2PAK-2-6

D(TAB)

G(1)

S(2, 3, 4, 5, 6, 7)

H2PAK-6

H2PAK-2

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STH320N4F6-2

320N4F6

H2PAK-2

Tape and reel

STH320N4F6-6

H2PAK-6

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