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STL7DN6LF3 Scheda tecnica(PDF) 1 Page - STMicroelectronics |
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STL7DN6LF3 Scheda tecnica(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() This is information on a product in full production. February 2015 DocID023010 Rev 4 1/18 STL7DN6LF3 Automotive-grade dual N-channel 60 V, 35 m Ω typ., 6.5 A STripFET™ F3 Power MOSFET in PowerFLAT™ 5x6 double island Datasheet - production data Figure 1. Internal schematic diagram Features • Designed for automotive application and AEC-Q101 qualified • Logic level VGS(th) • 175 °C junction temperature • 100% avalanche rated • Wettable flank package Applications • Switching applications Description This device is a dual N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. PowerFLAT™ 5x6 double island 1 2 3 4 Top view Order code VDS RDS(on) max ID STL7DN6LF3 60 V 43 m Ω 6.5 A Table 1. Device summary Order code Marking Package Packaging STL7DN6LF3 7DN6LF3 PowerFLAT™ 5x6 double island(1) Tape and reel 1. For wettable flank option, please contact ST sale offices. www.st.com |
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