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STPSC6H065DI Scheda tecnica(PDF) 1 Page - STMicroelectronics

Il numero della parte STPSC6H065DI
Spiegazioni elettronici  650 V power Schottky silicon carbide diode
PDF  14 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPSC6H065DI Scheda tecnica(HTML) 1 Page - STMicroelectronics

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This is information on a product in full production.
July 2015
DocID023247 Rev 6
1/14
STPSC6H065
650 V power Schottky silicon carbide diode
Datasheet
- production data
Features
• No reverse recovery charge in application
current range
• Switching behavior independent of
temperature
• Dedicated to PFC applications
• High forward surge capability
• Insulated package TO-220AC Ins:
– Insulated voltage: 2500 V rms
– Typical package capacitance: 7 pF
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1. Device summary
Symbol
Value
IF(AV)
6 A
VRRM
650 V
Tj (max)
175 °C
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