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PTF080601F Scheda tecnica(PDF) 2 Page - Infineon Technologies AG

Il numero della parte PTF080601F
Spiegazioni elettronici  LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz
PDF  6 Pages
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

PTF080601F Scheda tecnica(HTML) 2 Page - Infineon Technologies AG

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Developmental Data Sheet
2
2003-12-05
Developmental PTF080601
DC Characteristics at TCASE = 25°C unless otherwise indicated
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
—
65
—
V
Drain Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
1.0
—
µA
On-State Resistance
VGS = 10 V, IDS = 1 A
RDS(on)
—
0.1
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ = 550 mA
VGS
—
3.2
—
V
Gate Leakage Current
VGS = 10 V, VDS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PTF080601A
PD
180
W
Above 25°C derate by
1.03
W/°C
Total Device Dissipation
PTF080601E
PD
195
W
Above 25°C derate by
1.11
W/°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C) PTF080601A
RθJC
0.972
°C/W
PTF080601E
RθJC
0.897
°C/W



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