ACE2607B datasheet(2/5 Pages) ACE

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ACE2607B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.3

Ordering information

ACE2607B XX + H

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

On/Off characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250uA

-30

-34

Zero Gate Voltage Drain Current

IDSS

VDS=-24V, VGS=0V

-3

-200

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

±1.5

±50

On characteristics

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-5A

VGS=-4.5V, ID=-4A

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-1

-1.3

-3

Forward Transconductance

gFS

VDS=-5V, ID=-6A

Switching characteristics

Turn-On Delay Time

Td(on)

VDD=-15V, RL=2.5Ω,

VGS=-10V, RGEN=3Ω

8.6

Turn-Off Delay Time

Td(off)

28.2

Dynamic characteristics

Input Capacitance

Ciss

VDS=-15V, VGS=0V

f=1.0MHz

550

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Drain-source diode characteristics and maximum ratings

Drain-Source Diode Forward

Voltage

VSD

VGS=0V, IS=-1A

(2)

-0.81

Note: 1. The value of PD is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment

with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is

based on the DC thermal resistance rating.

2. Repetitive rating, pulse width limited by junction temperature.

GM : SOT-23-6L

Pb - free

Halogen - free

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