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HMC286 Scheda tecnica(PDF) 4 Page - Hittite Microwave Corporation |
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HMC286 Scheda tecnica(HTML) 4 Page - Hittite Microwave Corporation |
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4 / 6 page ![]() MICROWAVE CORPORATION 8 - 25 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 HMC286 v02.0204 Outline Drawing Absolute Maximum Ratings GaAs MMIC LOW NOISE AMPLIFIER, 2.3 - 2.5 GHz NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Drain Bias Voltage (Vdd) +7.0 Vdc RF Input Power (RFin)(Vdd = +3.0 Vdc) 0 dBm Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 6.35 mW/°C above 85 °C) 0.413 W Thermal Resistance (channel to lead) 157 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C |
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