MICROWAVE CORPORATION

8 - 121

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12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

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8

HMC356LP3

v01.0604

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 350 - 550 MHz

Typical Supply Current vs. Vdd

Vdd (Vdc)

Idd (mA)

+4.5

103

+5.0

104

+5.5

105

Drain Bias Voltage (Vdd)

+8.0 Vdc

RF Input Power (RFin)(Vdd = +5.0 Vdc)

+15 dBm

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 14 mW/°C above 85 °C)

0.910 W

Thermal Resistance

(channel to ground paddle)

71.4 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Absolute Maximum Ratings

Outline Drawing

NOTES:

1. MATERIAL PACKAGE BODY: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY

3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

6. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.

PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.

7. PACKAGE WARP SHALL NOT EXCEED 0.05mm.

8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB

LAND PATTERN.