RoHS Device

QW-BTR32

Page 1

REV:B

Features

-Switching Transistor

1

Base

2

Emitter

Collector

3

General Purpose Transistor

Company reserves the right to improve product design , functions and reliability without notice.

Dimensions in inches and (millimeter)

SOT-23

3

1

2

0.118(3.00)

0.110(2.80)

0.055(1.40)

0.047(1.20)

0.079(2.00)

0.071(1.80)

0.041(1.05)

0.035(0.90)

0.020(0.50)

0.012(0.30)

0.006(0.15)

0.003(0.08)

0.100(2.55)

0.089(2.25)

0.004(0.10) max

0.012(0.30)

0.020(0.50)

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

Collector power dissipation

Thermal resistance, junction to ambient

Junction temperature

Storage temperature range

Units

Symbol

Parameter

Value

60

40

6

600

300

417

150

-55 to +150

V

V

V

mA

mW

°C/W

°C

°C

Circuit Diagram