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MA4AGSW3 Scheda tecnica(PDF) 2 Page - M/A-COM Technology Solutions, Inc. |
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MA4AGSW3 Scheda tecnica(HTML) 2 Page - M/A-COM Technology Solutions, Inc. |
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2 / 8 page ![]() SP3T AlGaAs PIN Diode Switch Rev. V7 MA4AGSW3 2 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support 2 Electrical Specifications @ TA = 25°C, +/-10mA bias current (On-wafer measurements) *Note: Typical switching speed is measured from 10% to 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 390 pF - 560 pF and a resistor between 150 - 220 Ohms to achieve 20 ns rise and fall times. RF SPECIFICATIONS PARAMETER FREQUENCY BAND MIN TYP MAX UNITS INSERTION LOSS 0.05 - 18GHz --- 0.6 0.7 dB 18 - 50GHz --- 0.8 1.1 dB ISOLATION 0.05 - 18GHz 38 45 --- dB 18 - 50GHz 24 31 --- dB INPUT RETURN LOSS 0.05 - 18GHz --- 21 --- dB 18 - 50GHz --- 24 --- dB OUTPUT RETURN LOSS 0.05 - 18GHz --- 26 --- dB 18 - 50GHz --- 20 --- dB SWITCHING SPEED * ( 10 % - 90 % RF VOLTAGE ) 10GHZ --- 20 --- nS |
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