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ST002 Scheda tecnica(PDF) 2 Page - Stanson Technology |
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ST002 Scheda tecnica(HTML) 2 Page - Stanson Technology |
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2 / 7 page ![]() ST1002 N Channel Enhancement Mode MOSFET 3.0A 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stnasontech.com ST1002 2013 . V1 2 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current TJ=150℃ TA=25℃ TA=70℃ ID 5.0 3.0 A Pulsed Drain Current IDM 15 A Continuous Source Current (Diode Conduction) IS 1.9 A Power Dissipation TA=25℃ TA=70℃ PD 2.0 1.2 W Operation Junction Temperature TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 75 ℃/W |
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