BC558B datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Valid, if leads are kept at ambient temperature at a distance of 2 mm from case

Gültig, wenn die Anschlußdrähte in 2 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden

01.11.2003

General Purpose Transistors

BC 556 ... BC 559

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

Base saturation voltage – Basis-Sättigungsspannung

- I

C = 100 mA, - IB = 5 mA

- V

BEsat

–

1 V

Base-Emitter voltage – Basis-Emitter-Spannung

- V

CE = 5 V, - IC = 2 mA

- V

580 mV

660 mV

700 mV

Collector-Emitter cutoff current – Kollektorreststrom

- V

CE = 60 V

BC 556

- I

CE0

–

0.1

- V

CE = 40 V

BC 557

- I

CE0

–

0.1

- V

CE = 25 V

BC 558

- I

CE0

–

0.1

- V

CE = 25 V

BC 559

- I

CE0

–

0.1

Gain-Bandwidth Product – Transitfrequenz

- V

CE = 5 V, - IC = 10 mA, f = 100 MHz

150 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- V

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

6 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- V

EB = 0.5 V, f = 1 MHz

EB0

–

9 pF

–

Noise figure – Rauschzahl

- V

CE = 5 V, - IC = 200

BC 556...

–

2 dB

10 dB

G = 2 k

S f = 1 kHz,

BC 558

)f = 200 Hz

BC 559

–

1 dB

4 dB

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

200 K/W 1)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BC 546 ... BC 549

Available current gain groups per type

Lieferbare Stromverstärkungsgruppen pro Typ

BC 556A

BC 557A

BC 558A

BC 556B

BC 557B

BC 558B

BC 559B

BC 557C

BC 558C

BC 559C

BC558B Scheda tecnica(PDF) 2 Page - Diotec Semiconductor

BC558B Scheda tecnica(HTML) 2 Page - Diotec Semiconductor

Html Pages

1 2

Scheda tecnica Scarica

Link URL