BCX19 datasheet(2/2 Pages) DIOTEC

2 / 2 page

1) Tested with pulses t

p = 300

:s, duty cycle # 2% – Gemessen mit Impulsen t

p = 300

:s, Schaltverhältnis # 2%

2) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

01.11.2003

General Purpose Transistors

BCX 19 , BCX 20

Characteristics (T

j = 25

/C)

Kennwerte (T

j = 25

/C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis 1)

CE = 1 V, IC = 100 mA

100

–

600

CE = 1 V, IC = 300 mA

–

CE = 1 V, IC = 500 mA

–

Base-Emitter voltage – Basis-Emitter-Spannung 1)

CE = 1 V, IC = 500 mA

BEon

–

1.2 V

Gain-Bandwidth Product – Transitfrequenz

CE = 5 V, IC = 10 mA, f = 100 MHz

100 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

CB = 10 V, IE = ie = 0, f = 1 MHz

CB0

–

5 pF

–

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

thA

420 K/W 2)

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

BCX 17, BCX 18

Marking – Stempelung

BCX 19 = U1

BCX 20 = U2

BCX19 Scheda tecnica(PDF) 2 Page - Diotec Semiconductor

BCX19 Scheda tecnica(HTML) 2 Page - Diotec Semiconductor

Html Pages

1 2

Scheda tecnica Scarica

Link URL