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2N1470 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N1470 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN Power Transistor 2N1470 DESCRIPTION · Excellent Safe Operating Area · Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 1.5A · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) APPLICATIONS · Designed for general purpose amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 3 A PC Collector Power Dissipation@TC=25℃ 55 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ |
Codice articolo simile - 2N1470 |
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Descrizione simile - 2N1470 |
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