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2N2222 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N2222 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Power Transistor 2N2222 DESCRIPTION · Collector Current- IC= 0.8A · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 30V(Min) · Complement to Type 2N2907 APPLICATIONS · Designed for general-purpose switching and linear amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-a Thermal Resistance,Junction to Ambient 350 K/W SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.8 A IBM Base Current-Peak 0.2 A PC Collector Power Dissipation@TC=25℃ 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ |
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