2SB630 datasheet(2/2 Pages) ISC

Il numero della parte	2SB630

Spiegazioni elettronici	Complement to Type 2SD610

PDF	2 Pages

Scroll/Zoom	100%

Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc & iscsemi is registered trademark

isc Silicon PNP Power Transistor

2SB630

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -0.5A; IB= -50mA

-1.0

VBE(sat)

Base-Emitter Saturation Voltage

IC= -0.5A; IB= -50mA

-1.5

ICBO

Collector Cutoff Current

VCB= -150V; IE= 0

-1.0

μ A

IEBO

Emitter Cutoff Current

VEB= -3V; IC= 0

-1.0

μ A

hFE-1

DC Current Gain

IC= -5mA; VCE= -10V

hFE-2

DC Current Gain

IC= -0.5A; VCE= -10V

200

COB

Collector Output Capacitance

IE= 0; VCB= -10V; f= 1MHz

Current-Gain

—Bandwidth Product

IC= -0.5A; VCE= -10V

MHz

 h

FE-2 Classifications

40-80

60-120

100-200

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