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BF775 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BF775 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc RF Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN RF Transistor BF775 DESCRIPTION · Low Noise Figure NF = 1.8 dB TYP. @VCE = 6 V, IC = 2 mA, f = 900 MHz · High Gain ︱ S21e︱2 = 12.5 dB TYP. @VCE= 8 V,IC = 15 mA,f = 900 MHz APPLICATIONS · Designed for use in TV-sat and UHF tuners. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage 20 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 30 mA IB Base Current-Continuous 4 mA PC Collector Power Dissipation @TC=25℃ 0.28 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
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