ZXTP2012GTA datasheet(4/7 Pages) DIODES

4 / 7 page

ZXTP2012G

Document number: DS33712 Rev. 2 - 2

4 of 7

www.diodes.com

December 2015

ZXTP2012G

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

BVCBO

-100

-120

—

IC = -100µA

Collector-Emitter Breakdown Voltage

BVCER

-100

-120

—

IC = -1µA, RB ≤ 1kΩ

Collector-Emitter Breakdown Voltage (Note 9)

BVCEO

-60

-80

—

IC = -10mA

Emitter-Base Breakdown Voltage

BVEBO

-7

-8.1

—

IE = -100µA

Collector Cutoff Current

ICBO

—



< -1

—



-20

-0.5

µA

VCB = -80V

VCB = -80V, TA = +100°C

Collector Cutoff Current

ICER

≤1k

Ω

—



< -1

—



-20

-0.5

µA

VCB = -80V

VCB = -80V, TA = +100°C

Emitter Cutoff Current

IEBO

—

< -1

-10

VEB = -6V

Collector-Emitter Saturation Voltage (Note 9)

VCE(SAT)

—



-15

-55

-90

-195

-25

-70

-120

-250

IC = -0.1A, IB = -10mA

IC = -1A, IB = -100mA

IC = -2A, IB = -200mA

IC = -5A, IB = -500mA

Base-Emitter Saturation Voltage (Note 9)

VBE(SAT)

—



-1.03

-1.15

IC = -5A, IB = -500mA

Base-Emitter Turn-On Voltage (Note 9)

VBE(ON)

—



-0.92

-1.02

IC = -5A, VCE = -1V

DC Current Gain (Note 9)

hFE

100

250

200

300

—

IC = -10mA, VCE = -1V

IC = -2A, VCE = -1V

IC = -5A, VCE = -1V

IC = -10A, VCE = -1V

Transition Frequency

—

120

—

MHz

VCE = -10V, IC = -100mA,

f = 50MHz

Output Capacitance (Note 9)

COBO

—

VCB = -10V, f = 1MHz

Switching Times

tON

—

VCC = -10V, IC = -1A,

IB1 = -IB2 = 100mA

tOFF

—

370

—

Note:

Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

ZXTP2012GTA Scheda tecnica(PDF) 4 Page - Diodes Incorporated

ZXTP2012GTA Scheda tecnica(HTML) 4 Page - Diodes Incorporated

Html Pages

1 2 3 4 5 6 7

Scheda tecnica Scarica

Link URL