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2SC3834Y Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3834Y Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor 2SC3834Y ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A 1.2 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 100 μA hFE DC Current Gain IC= 3A ; VCE= 4V 100 200 fT Current-Gain—Bandwidth Product IE= -0.5A ; VCE= 12V 30 MHz COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz 110 pF Switching times ton Turn-on Time IC= 3A ;IB1=0.3A; IB2= -0.6A RL= 16.7Ω; VCC= 50V 0.5 μs tstg Storage Time 3.0 μs tf Fall Time 0.5 μs |
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