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2SC2759 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC2759 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc RF Product Specification isc website:www.iscsemi.cn 1 isc Silicon NPN RF Transistor 2SC2759 DESCRIPTION · Low Noise · High Conversion Gain Gcb= 12.5dB TYP. @IE= -5mA, VCB= 10V APPLICATIONS · Designed for use in VHF RF amplifier, local oscillator,mixer. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 14 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous 50 mA PC Collector Power Dissipation @TC=25℃ 0.15 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature Range -55~125 ℃ |
Codice articolo simile - 2SC2759 |
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