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HDBLS106G Scheda tecnica(PDF) 3 Page - Taiwan Memory Technology |
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HDBLS106G Scheda tecnica(HTML) 3 Page - Taiwan Memory Technology |
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3 / 4 page ![]() Min Max Min Max A 5.00 5.20 0.197 0.205 B 1.02 1.20 0.040 0.047 C 8.13 8.51 0.320 0.335 D 2.40 2.60 0.094 0.102 E 9.80 10.30 0.386 0.406 F 6.20 6.50 0.244 0.256 G 0.22 0.33 0.009 0.013 H 1.02 1.53 0.040 0.060 I 0.076 0.33 0.003 0.013 J 3.90 4.10 0.154 0.161 Symbol A B C D E F P/N = Specific Device Code G = Green Compound YW = Date Code F = Factory Code Document Number: DS_D1310040 Version: F15 HDBLS101G - HDBLS107G Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) DBLS 2.6 9.2 MARKING DIAGRAM SUGGESTED PAD LAYOUT Unit (mm) 2.3 1.3 6.9 11.5 Unit (inch) 0.091 0.051 0.272 0.453 0.102 0.362 0 10 20 30 40 50 60 70 0.1 1 10 100 1000 REVERSE VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE HDBLS101G - HDBLS105G HDBLS106G - HDBLS107G f=1.0MHz Vsig=50mVp-p |
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