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2SK549 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK549 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK549 ·ELECTRICAL CHARACTERISTICS (T C=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA 60 V VGS(th) Gate Threshold Voltage VDS=10 VGS; ID=1mA 2.0 4.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID= 5A 0.1 0.15 Ω IGSS Gate Source Leakage Current VGS= ±12V;VDS= 0 ±10 uA IDSS Zero Gate Voltage Drain Current VDS=50V; VGS= 0 250 uA VSD Diode Forward Voltage IF=10A; VGS=0 1.2 V tr Rise time VGS=10V;ID=5A; RL=6Ω 40 ns ton Turn-on time 55 ns tf Fall time 45 ns toff Turn-off time 100 ns PDF pdfFactory Pro www.fineprint.cn |
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