3DD8F datasheet(1/2 Pages) ISC

Il numero della parte	3DD8F

Spiegazioni elettronici	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 200V(Min)

PDF	2 Pages

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon NPN Power Transistor

3DD8F

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 200V(Min)

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 2V(Max) @IC= 5A

APPLICATIONS

·Designed for power amplifier, low speed switching and

regulated power supply applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

200

V

VCEO

Collector-Emitter Voltage

200

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

PC

Collector Power Dissipation

@ TC=75℃

100

W

TJ

Junction Temperature

175

℃

Tstg

Storage Temperature Range

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.0

℃/W

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