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BU508AT Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited

Il numero della parte BU508AT
Spiegazioni elettronici  Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 700V (Min)
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU508AT Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited

  BU508AT Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU508AT Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
BU508AT
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; IB= 0
700
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4.5A; IB= 2.0A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4.5A; IB= 2.0A
1.5
V
ICES
Collector Cutoff Current
VCE= 1300V; VBE= 0
VCE= 1300V; VBE= 0; TC=125℃
0.1
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 5.0V; IC= 0
10
mA
hFE-1
DC Current Gain
IC= 0.1A; VCE= 5V
6
30
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 0.1MHz
125
pF
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 5V; ftest= 1.0MHz
7
MHz
Switching times
tstg
Storage Time
IC= 4.5A , IB1= 1.8A; LB= 10μH
8.0
μs
tf
Fall Time
0.5
μs



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