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2N18 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N18 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 2N18 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID=250µA 180 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=1mA 2.0 4.0 V VSD Diode Forward On-voltage IS= 2A ;VGS= 0 1.4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 1A 3.5 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS=180V; VGS= 0 250 µA Ciss Input Capacitance VDS=25V; VGS=0V; fT=1MHz 200 pF Crss Reverse Transfer capacitance 25 Coss Output Capacitance 80 tr Rise Time VGS=10V; ID=1.25A; VDD=50V; RL=50Ω 25 ns td(on) Turn-on Delay Time 15 tf Fall Time 15 td(off) Turn-off Delay Time 15 · PDF pdfFactory Pro www.fineprint.cn |
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