HFD5N60F datasheet(3/8 Pages) SEMIHOW

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Typical Characteristics

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

G, Total Gate Charge [nC]

* Note : I

D = 5.0A

DS = 300V

DS = 120V

DS = 480V

-1

200

400

600

800

1000

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

* Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

0.1

-55

* Notes :

1. V

DS= 30V

2. 300us Pulse Test

GS, Gate-Source Voltage [V]

150

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.1

* Notes :

1. V

GS= 0V

2. 300us Pulse Test

SD, Source-Drain Voltage [V]

150

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

* Notes :

1. 300us Pulse Test

2. T

C = 25

DS, Drain-Source Voltage [V]

468

D, Drain Current[A]

GS = 10V

GS = 20V

* Note : T

J = 25

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