1N4148 / 1N4448

Features

- Fast Switching Speed

- General Purpose Rectification

- Silicon Epitaxial Planar Construction

Mechanical Data

- Case: DO-35

- Terminals: Solderable per MIL-STD-202,

Method 208

- Polarity: Cathode Band

- Weight: 0.13 grams (approx.)

Fast Switching Diode

Fast Switching Diode

www.comchiptech.com

COMCHIP

COMCHIP

MDS0312005A

Page 1

High Speed

DO-35

Dimensions in inches and (millimeters)

1.0 (25.4)

Min.

1.0 (25.4)

Min.

0.079 (2.0)

Max.

0.157 (4.0)

Max.

0.024 (0.60)

Max.

Characteristic

Symbol

1N4148

1N4448

Unit

Non-Repetitive Peak Reverse Voltage

100

V

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

75

V

RMS Reverse Voltage

53

V

Forward Continuous Current (Note 1)

300

500

mA

Average Rectified Output Current (Note 1)

150

mA

Non-Repetitive Peak Forward Surge Current @ t = 1.0s

@ t = 1.0

ms

1.0

2.0

A

Power Dissipation (Note 1)

Derate Above 25

°C

500

1.68

mW

mW/

°C

Thermal Resistance, Junction to Ambient Air (Note 1)

300

K/W

Operating and Storage Temperature Range

-65 to +175

°C

Notes: 1. Valid provided that device terminals are kept at ambient temperature.

Characteristic

Symbol

Min

Max

Unit

Test Condition

Maximum Forward Voltage

1N4148

1N4448

1N4448

¾

0.62

¾

1.0

0.72

1.0

V

Maximum Peak Reverse Current

¾

5.0

50

30

25

mA

mA

mA

nA

°C

°C

Capacitance

¾

4.0

pF

Reverse Recovery Time

¾

4.0

ns

W