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3CT06B Scheda tecnica(PDF) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

Il numero della parte 3CT06B
Spiegazioni elettronici  Half AC switching
PDF  6 Pages
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Produttore elettronici  JSMC [JILIN SINO-MICROELECTRONICS CO., LTD.]
Homepage  http://www.hwdz.com.cn
Logo JSMC - JILIN SINO-MICROELECTRONICS CO., LTD.

3CT06B Scheda tecnica(HTML) 2 Page - JILIN SINO-MICROELECTRONICS CO., LTD.

  3CT06B Datasheet HTML 1Page - JILIN SINO-MICROELECTRONICS CO., LTD. 3CT06B Datasheet HTML 2Page - JILIN SINO-MICROELECTRONICS CO., LTD. 3CT06B Datasheet HTML 3Page - JILIN SINO-MICROELECTRONICS CO., LTD. 3CT06B Datasheet HTML 4Page - JILIN SINO-MICROELECTRONICS CO., LTD. 3CT06B Datasheet HTML 5Page - JILIN SINO-MICROELECTRONICS CO., LTD. 3CT06B Datasheet HTML 6Page - JILIN SINO-MICROELECTRONICS CO., LTD.  
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R
3CT06B
版本：201510F
2/6
绝对最大额定值
ABSOLUTE RATINGS (Tc=25
)
℃
电特性 ELECTRICAL CHARACTERISTIC (TC=25℃ unless otherwise stated)
动态特性 DYNAMIC CHARACTERISTICS (TC=25℃ unless otherwise stated)
项
目
Parameter
符
号
Symbol
数
值
Value
单
位
Unit
断态重复峰值电压 Repetitive peak off-state voltage
VDRM
600
V
反向重复峰值电压 Repetitive peak reverse voltage
VRRM
600
V
通态平均电流 Average on-state current
IT（AV）
0.63
A
通态方均根电流 On-state RMS current ( half sine wave)
IT(RMS)
1.0
A
非重复浪涌峰值通态电流 Non- repetitive surge peak on-state current
( half sine wave ,t=10ms)
ITSM
8
A
峰值门极电流 Peak gate current
IGM
1
A
门极峰值电压 Peak gate voltage
VGM
5
V
反向门极峰值电压 Peak reverses gate voltage
VRGM
5
V
门极峰值功率 Peak gate power
PGM
2
W
平均门极功率 Average gate power( over any 20ms period)
PG(AV)
0.1
W
存储温度 Storage temperature
Tstg
-40~150
℃
操作结温 Operation junction temperature
TVJ
125
℃
项
目
Parameter
符号
Symbol
测试条件
Tests conditions
最小
min
典型
typ
最大
max
单位
Unit
断 态 峰 值 重 复 电 流 Peak Repetitive
Blocking Current
IDRM
VDM=VDRM, Tj=125℃,
RGK=1KΩ
-
-
0.1
mA
反 向 峰 值 重 复 电 流 Peak Repetitive
Reverse Current
IRRM
VRM=VRRM, Tj=125℃,
RGK=1KΩ
-
-
0.1
mA
峰值通态电压 Peak on-state voltage
VTM
ITM=2A
-
－
1.8
V
门极触发电流 Gate trigger current
IGT
VDM=12V,IT=0.1A
10
-
140
μA
门极触发电压 Gate trigger voltage
VGT
VDM=12V,IT=0.1A
-
0.65
0.8
V
维持电流 Holding current
IH
VDM=12V, IGT=1mA
-
-
5
mA
项
目
Parameter
符号
Symbol
测试条件
Tests conditions
最小
min
典型
typ
最大
max
单位
Unit
断态临界电压上升率
Critical rate of rise of
off- state voltage
dV/dt
VDM=67% VDRM(MAX),
Tj=125℃,RGK=1KΩ
10
-
-
V/μs



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