MB2S, MB4S, MB6S

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Vishay General Semiconductor

Revision: 19-Aug-13

3

Document Number: 88661

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Forward Voltage Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.3

0.5

0.7

0.9

1.1

1.3

1.5

0.01

0.1

1

10

T

T

Pulse Width = 300 µs

1 % Duty Cycle

Instantaneous Forward Voltage (V)

0

20

40

60

80

100

0.01

0.1

1

10

100

T

T

Percent of Rated Peak Reverse Voltage (%)

0.1

1

10

100

0

5

10

15

20

25

30

1000

Reverse Voltage (V)

T

f = 1.0 MHz

V

p-p

0.029 (0.74)

0.017 (0.43)

0 to 8°

0.049 (1.24)

0.039 (0.99)

0.062 (1.57)

0.058 (1.47)

0.016 (0.41)

0.006 (0.15)

0.018 (0.46)

0.014 (0.36)

0.008 (0.20)

0.004 (0.10)

0.114 (2.90)

0.110 (2.80)

0.058 (1.47)

0.054 (1.37)

0.252 (6.40)

0.272 (6.90)

0.106 (2.70)

0.090 (2.30)

0.0075 (0.19)

0.0065 (0.16)

0.105 (2.67)

0.095 (2.41)

0.195 (4.95)

0.179 (4.55)

0.144 (3.65)

0.161 (4.10)

0.205 (5.21)

0.195 (4.95)

0.114 (2.90)

0.094 (2.40)

0.038 (0.96)

0.019 (0.48)

0.272 MAX.

(6.91 MAX.)

0.030 MIN.

(0.76 MIN.)

0.023 MIN.

(0.58 MIN.)

0.105 (2.67)

0.095 (2.41)

TO-269AA (MBS)

Mounting Pad Layout