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ZC821 Scheda tecnica(PDF) 2 Page - Zetex Semiconductors

Il numero della parte ZC821
Spiegazioni elettronici  SILICON ION-IMPLANTED HYPERABRUPT TUNER DIODES
PDF  6 Pages
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Produttore elettronici  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
Logo ZETEX - Zetex Semiconductors

ZC821 Scheda tecnica(HTML) 2 Page - Zetex Semiconductors

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830 series
ISSUE 6 - JANUARY 2002
2
PART
Capacitance (pF)
V
R=2V,
f=1MHz
Min Q
V
R=3V
f=50MHz
Capacitance Ratio
C
2 /C20
at f=1MHz
MIN.
NOM.
MAX.
MIN.
MAX.
829A
7.38
8.2
9.02
250
4.3
5.8
829B
7.79
8.2
8.61
250
4.3
5.8
830A
9.0
10.0
11.0
300
4.5
6.0
830B
9.5
10.0
10.5
300
4.5
6.0
831A
13.5
15.0
16.5
300
4.5
6.0
831B
14.25
15.0
15.75
300
4.5
6.0
832A
19.8
22.0
24.2
200
5.0
6.5
832B
20.9
22.0
23.1
200
5.0
6.5
833A
29.7
33.0
36.3
200
5.0
6.5
833B
31.35
33.0
34.65
200
5.0
6.5
834A
42.3
47.0
51.7
200
5.0
6.5
834B
44.65
47.0
49.35
200
5.0
6.5
835A
61.2
68.0
74.8
100
5.0
6.5
835B
64.6
68.0
71.4
100
5.0
6.5
836A
90.0
100.0
110.0
100
5.0
6.5
836B
95.0
100.0
105.0
100
5.0
6.5
TUNING CHARACTERISTICS at Tamb = 25°C
PARAMETER
SYMBOL
MAX
UNIT
Forward current
I
F
200
mA
Power dissipation at T
amb =25 C SOT23
P
tot
330
mW
Power dissipation at T
amb =25 C SOD323
P
tot
330
mW
Power dissipation at T
amb =25 C SOD523
P
tot
250
mW
Operating and storage temperature range
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Reverse breakdown voltage
I
R = 10uA
25
V
Reverse voltage leakage
V
R = 20V
0.2
20
nA
Temperature coefficient of capacitance
V
R = 3V, f = 1MHz
300
400
ppCm/ C
ELECTRICAL CHARACTERISTICS at Tamb = 25°C



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