CSD13306W datasheet(3/12 Pages) TI

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CSD13306W

www.ti.com

SLPS537 – MARCH 2015

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STATIC CHARACTERISTICS

BVDSS

Drain-to-Source Voltage

VGS = 0 V, ID = 250 μA

IDSS

Drain-to-Source Leakage Current

VGS = 0 V, VDS = 9.6 V

μA

IGSS

Gate-to-Source Leakage Current

VDS = 0 V, VGS = 10 V

100

VGS(th)

Gate-to-Source Threshold Voltage

VDS = VGS, ID = 250 μA

0.7

1.0

1.3

VGS = 2.5 V, ID = 1.5 A

12.9

15.5

Ω

RDS(on)

Drain-to-Source On-Resistance

VGS = 4.5 V, ID = 1.5 A

8.8

10.2

Ω

gƒs

Transconductance

VDS = 1.2 V, ID =1.5 A

DYNAMIC CHARACTERISTICS

CISS

Input Capacitance

1050

1370

COSS

Output Capacitance

VGS = 0 V, VDS = 6 V, ƒ = 1 MHz

324

421

CRSS

Reverse Transfer Capacitance

226

294

4.2

8.4

Ω

Gate Charge Total (4.5V)

8.6

11.2

Qgd

Gate Charge Gate-to-Drain

3.0

VDS = 6 V, ID = 1.5 A

Qgs

Gate Charge Gate-to-Source

1.1

Qg(th)

Gate Charge at Vth

1.2

QOSS

Output Charge

VDS = 6 V, VGS = 0 V

3.3

td(on)

Turn On Delay Time

Rise Time

VDS = 6 V, VGS = 4.5 V, ID = 1.5 A

RG = 4 Ω

td(off)

Turn Off Delay Time

tƒ

Fall Time

DIODE CHARACTERISTICS

VSD

Diode Forward Voltage

IS = 1.5 A, VGS = 0 V

0.7

1.0

Qrr

Reverse Recovery Charge

14.8

VDS= 6 V, IF = 1.5 A, di/dt = 200 A/μs

trr

Reverse Recovery Time

5.2 Thermal Information

TA = 25°C unless otherwise stated

THERMAL METRIC

MIN

TYP

MAX

UNIT

Junction-to-Ambient Thermal Resistance (1)

230

RθJA

°C/W

Junction-to-Ambient Thermal Resistance (2)

(1)

Device mounted on FR4 material with minimum Cu mounting area

(2)

Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.

Typ RθJA = 230°C/W

Typ RθJA = 65°C/W

when mounted on

minimum pad area of

1 inch2 of 2 oz. Cu.

2 oz. Cu.

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