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SN54HC00TDF2 Scheda tecnica(PDF) 2 Page - Texas Instruments

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Il numero della parte SN54HC00TDF2
Spiegazioni elettronici  Quadruple 2-Input Positive-NAND Gate
PDF  6 Pages
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
Logo TI1 - Texas Instruments

SN54HC00TDF2 Scheda tecnica(HTML) 2 Page - Texas Instruments

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SN54HC00-DIE
SCLS747 – FEBRUARY 2014
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
3 Bare Die Information
BACKSIDE
BOND PAD
BOND PAD
DIE THICKNESS
BACKSIDE FINISH
POTENTIAL
METALLIZATION COMPOSITION
THICKNESS
10.5 mils.
Silicon with backgrind
Floating
TiW/AlCu2%
1199 nm
2
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Copyright © 2014, Texas Instruments Incorporated
Product Folder Links: SN54HC00-DIE



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