SS2609

Hall Latch - High Sensitivity

2

V3.10 Nov 1, 2013

General Description

The SS2609 Hall effect sensor IC is fabricated from mixed signal CMOS technology. It incorporates advanced

chopper-stabilization techniques to provide accurate and stable magnetic switch points.

The circuit design provides an internally controlled clocking mechanism to cycle power to the Hall element and

analog signal processing circuits. This serves to place the high current-consuming portions of the circuit into a

“Sleep” mode. Periodically the device is “Awakened” by this internal logic and the magnetic flux from the Hall

then the output transistor is driven to change states accordingly. While in the “Sleep” cycle the output transistor is

latched in its previous state. The design has been optimized for service in applications requiring extended operating

lifetime in battery powered systems.

The output transistor of the SS2609 switches low (turns on) when a magnetic field perpendicular to the Hall sensor

south pole is removed (B

→0). This l atching property defines the device as a magnetic memory. When the magnet-

oscillation near the switching point, and allows clean switching of the output even in the presence of external me-

chanical vibration and electrical noise.

The TSOT-23 device is reversed from the UA package. The TSOT-23 output transistor will be latched on in the

presence of a sufficiently strong North pole magnetic field applied to the marked face.

Glossary of Terms

Internal Timing Circuit

0mT

0mT

Output level

Output level

OUT = High

Flux density

OUT = High

25Gs typ

OUT = Low

OUT = Low

UA package

- Latch characteristic

25Gs typ

-25Gs typ

Flux density

STT

package

- Latch characteristic

-25Gs typ

Awake Taw:20μs

Period

Sleep Tsl:600μs

Time

Current

0

Sample &

Output