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HBFP0420 Scheda tecnica(PDF) 3 Page - Agilent(Hewlett-Packard)

Il numero della parte HBFP0420
Spiegazioni elettronici  High Performance Isolated Collector Silicon Bipolar Transistor
PDF  10 Pages
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Produttore elettronici  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
Logo HP - Agilent(Hewlett-Packard)

HBFP0420 Scheda tecnica(HTML) 3 Page - Agilent(Hewlett-Packard)

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HBFP-0420 Typical Scattering Parameters,
V
CE = 2 V, IC = 5 mA, TC = 25°C
Freq.
S11
S21
S12
S22
GHz
Mag
Ang
dB
Mag
Ang
dB
Mag
Ang
Mag
Ang
0.1
0.746
-11.9
23.4
14.853
171.0
-41.4
0.009
84.8
0.985
-6.6
0.5
0.682
-55.6
21.9
12.473
139.8
-28.5
0.038
63.6
0.861
-29.4
0.9
0.607
-90.1
19.9
9.909
116.8
-25.0
0.056
49.3
0.696
-46.6
1.0
0.585
-97.5
19.3
9.181
112.2
-24.5
0.059
46.9
0.661
-49.3
1.5
0.532
-128.3
16.8
6.918
93.1
-22.9
0.072
37.2
0.516
-62.2
1.8
0.512
-143.1
15.5
5.952
83.4
-22.3
0.077
33.2
0.450
-67.7
2.0
0.502
-151.6
14.7
5.453
78.4
-21.9
0.080
31.2
0.419
-71.6
2.5
0.490
-169.8
12.9
4.422
65.8
-21.2
0.088
26.9
0.359
-78.4
3.0
0.483
-174.6
11.6
3.786
55.2
-20.5
0.095
23.4
0.314
-86.3
3.5
0.480
161.4
10.3
3.286
45.2
-19.8
0.102
19.8
0.286
-92.5
4.0
0.479
149.2
9.3
2.908
35.7
-19.2
0.110
16.3
0.266
-98.1
4.5
0.482
137.6
8.4
2.629
26.5
-18.5
0.118
12.5
0.248
-104.1
5.0
0.487
126.5
7.6
2.389
17.4
-17.9
0.127
8.1
0.233
-110.5
5.5
0.497
115.4
6.9
2.205
8.3
-17.3
0.136
3.5
0.209
-117.9
6.0
0.513
105.0
6.2
2.040
-0.8
-16.8
0.145
-1.5
0.189
-126.4
6.5
0.532
94.6
5.6
1.902
-9.8
-16.3
0.153
-7.1
0.161
-137.1
7.0
0.553
84.0
5.0
1.778
-18.7
-15.8
0.162
-12.6
0.134
-152.0
7.5
0.575
74.5
4.4
1.662
-27.5
-15.3
0.171
-18.2
0.115
-171.2
8.0
0.592
66.0
3.9
1.559
-36.1
-14.9
0.179
-24.0
0.110
167.1
8.5
0.609
58.2
3.3
1.469
-44.4
-14.6
0.186
-29.8
0.113
147.2
9.0
0.623
50.7
2.9
1.393
-52.6
-14.2
0.195
-35.4
0.120
130.6
9.5
0.635
43.0
2.4
1.312
-60.8
-13.9
0.202
-41.6
0.127
118.0
10.0
0.648
34.5
1.9
1.248
-69.1
-13.6
0.209
-48.0
0.130
103.9
HBFP-0420 Noise Parameters: V
CE = 2 V, IC = 5 mA
Freq.
Fmin
Γ
opt
RN/50
Ga
GHz
dB
Mag
Ang
Ω
dB
0.9
1.00
0.281
28.8
9.6
22.19
1.0
1.02
0.266
36.6
9.2
21.39
1.5
1.10
0.187
68.3
7.6
18.30
1.8
1.14
0.175
94.1
6.8
16.92
2.0
1.18
0.154
118.4
6.1
16.21
2.5
1.25
0.184
146.5
5.4
14.34
3.0
1.32
0.226
165.9
5.0
13.00
3.5
1.39
0.254
-176.8
4.9
11.79
4.0
1.49
0.292
-162.3
5.0
10.79
4.5
1.58
0.312
-147.3
6.0
9.95
5.0
1.63
0.355
-135.5
6.8
9.22
5.5
1.75
0.375
-121.0
9.3
8.55
6.0
1.88
0.416
-108.5
12.3
7.99
6.5
1.94
0.453
-98.1
15.8
7.47
7.0
2.05
0.486
-84.4
21.4
6.99
7.5
2.15
0.506
-74.8
26.8
6.49
8.0
2.23
0.532
-65.0
33.6
6.04
8.5
2.47
0.556
-56.8
41.7
5.65
9.0
2.59
0.589
-48.4
50.4
5.32
9.5
2.63
0.610
-40.4
58.2
4.91
10.0
2.74
0.624
-31.0
68.3
4.56
S and noise parameters are measured
on a microstrip line made on
0.025 inch thick alumina carrier. The
input reference plane is at the end of
the base lead, the output reference
plane is at the end of the collector
lead. S and noise parameters include
the effect of four plated through via
holes connecting emitter landing pads
on the top of test carrier to the
microstrip ground plane on the
bottom side of the carrier. Two
0.020 inch diameter via holes are
placed within 0.010 inch from each
emitter lead contact point, one via on
each side of that point.



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