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HER201G Scheda tecnica(PDF) 1 Page - Diode Semiconductor Korea |
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HER201G Scheda tecnica(HTML) 1 Page - Diode Semiconductor Korea |
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1 / 2 page ![]() FEATURES Low cost Low leakage Low forward voltage drop High current capability MECHANICAL DATA Case:JEDEC DO-15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.014 ounces,0.39 grams Mounting position: Any Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. HER 203G HER 204G HER 205G HER 206G HER 207G HER 208G UNITS Maximum recurrent peak reverse voltage VRRM 200 300 400 600 800 1000 V Maximum RMS voltage VRMS 140 210 280 420 560 700 V Maximum DC blocking voltage VDC 200 300 400 600 800 1000 V Maximum average forw ard rectified current 9.5mm lead length, @T A=75 Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @T J=125 Maximum instantaneous forw ard voltage @2.0 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical Thermal Resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG 100 50 DO - 15 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS The plastic material carries U/L recognition 94V-0 2. Measured at 1.0MHZ and applied rev erse v oltage of 4.0V DC. 1.7 1.0 1.3 50 50 7 5 100.0 IR 30 HER201G --- HER208G A 5.0 Easily cleaned with alcohol,Isopropanol and similar solvents I(AV) 2.0 GLASS PASSIVATED RECTIFIERS 70 VOLTAGE RANGE: 50 --- 1000 V CURRENT: 2.0 A 35 HER 201G HER 202G 50 100 A 60.0 IFSM NOTE: 1. Measured with I F=0.5A, IR=1A, Irr=0.25A. A - 55 ---- + 175 50 - 55 ---- + 175 3. Thermal resistance junction to ambient. Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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