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BUW70 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUW70 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor BUW70 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A 0.8 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA hFE DC Current Gain IC= 4A; VCE= 5V 40 Switching times ton Turn-on Time IC= 5A; IB1= -IB2= 0.5A; RL= 10Ω 1.0 μs ts Storage Time 3.0 μs tf Fall Time 1.0 μs |
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