1998

©

Document No. D16156EJ2V0DS00 (2nd edition)

Date Published April 2002 N CP(K)

Printed in Japan

SILICON TRANSISTOR

2SD2403

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

DATA SHEET

2002

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

The

2SD2403

is

a

transistor

featuring

high

current

capacitance in small dimension.

This transistor is ideal for

DC/DC converters and motor drivers.

FEATURES

• High current capacitance

• Low collector saturation voltage

• Complementary transistor with 2SB1572

PACKAGE DRAWING (UNIT: mm)

ABSOLUTE MAXIMUM RATINGS (Ta = 25

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

80

V

Collector to emitter voltage

60

V

Emitter to base voltage

6.0

V

Collector current (DC)

3.0

A

Collector current (pulse)

PW

≤ 10 ms

duty cycle

≤ 50 %

5.0

A

Base current (DC)

0.2

A

Base current (pulse)

PW

≤ 10 ms

duty cycle

≤ 50 %

0.4

A

Total power dissipation

16 cm

2

× 0.7 mm ceramic board mounted

2.0

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C